Stabilization of anatase phase by uncompensated Ga-V co-doping in TiO2: A structural phase transition, grain growth and optical property study

Uncompensated Ga-V co-doped TiO2 samples have been prepared by modified sol-gel process. Inhibition of phase transition due to co-doping is confirmed by X-ray diffraction measurement. Activation of phase transition increases from 120 kJ/mol (x = 0) to 240 kJ/mol (x = 0.046) due to Ga-V incorporation. In anatase phase, lattice constant increases by the effect of Ga3+ interstitials. This results in inhibition of phase transition. Anatase phase becomes stable up to ~ 650 °C in co-doped sample whereas for pure TiO2 phase transition starts in between 450 and 500 °C. High-resolution transmission electron microscope image shows particle size decreases in anatase phase due to co-doping. Increasing strain due to Ga-V incorporation results in reducing crystallite size. Brunauer–Emmett–Teller analysis shows that surface increases from 4.55 m2/g (pure TiO2) to 96.53 m2/g (x = 0.046) by Ga-V incorporation. In rutile phase, grain growth process is enhanced mainly due to the effect of Vanadium and particles show a rod-like structure with majority {110} facets. Bandgap decreases in both phases and reduced to visible light region. For charge balance in uncompensated Ga-V co-doped sample, structural distortion created in the lattice by combining effect of substitution, interstitials and oxygen vacancies, which results in stabilization of anatase phase and reducing of bandgap.